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      Curved neuromorphic image sensor array using a MoS 2-organic heterostructure inspired by the human visual recognition system

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          Abstract

          Conventional imaging and recognition systems require an extensive amount of data storage, pre-processing, and chip-to-chip communications as well as aberration-proof light focusing with multiple lenses for recognizing an object from massive optical inputs. This is because separate chips ( i. e., flat image sensor array, memory device, and CPU) in conjunction with complicated optics should capture, store, and process massive image information independently. In contrast, human vision employs a highly efficient imaging and recognition process. Here, inspired by the human visual recognition system, we present a novel imaging device for efficient image acquisition and data pre-processing by conferring the neuromorphic data processing function on a curved image sensor array. The curved neuromorphic image sensor array is based on a heterostructure of MoS 2 and poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane). The curved neuromorphic image sensor array features photon-triggered synaptic plasticity owing to its quasi-linear time-dependent photocurrent generation and prolonged photocurrent decay, originated from charge trapping in the MoS 2-organic vertical stack. The curved neuromorphic image sensor array integrated with a plano-convex lens derives a pre-processed image from a set of noisy optical inputs without redundant data storage, processing, and communications as well as without complex optics. The proposed imaging device can substantially improve efficiency of the image acquisition and recognition process, a step forward to the next generation machine vision.

          Abstract

          Designing efficient bio-inspired visual recognition system remains a challenge. Here the authors present a curved neuromorphic image sensor array based on a heterostructure of MoS2 and pV3D3 integrated with a plano-convex lens for efficient image acquisition and data pre-processing.

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          Most cited references46

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          An ultra-lightweight design for imperceptible plastic electronics.

          Electronic devices have advanced from their heavy, bulky origins to become smart, mobile appliances. Nevertheless, they remain rigid, which precludes their intimate integration into everyday life. Flexible, textile and stretchable electronics are emerging research areas and may yield mainstream technologies. Rollable and unbreakable backplanes with amorphous silicon field-effect transistors on steel substrates only 3 μm thick have been demonstrated. On polymer substrates, bending radii of 0.1 mm have been achieved in flexible electronic devices. Concurrently, the need for compliant electronics that can not only be flexed but also conform to three-dimensional shapes has emerged. Approaches include the transfer of ultrathin polyimide layers encapsulating silicon CMOS circuits onto pre-stretched elastomers, the use of conductive elastomers integrated with organic field-effect transistors (OFETs) on polyimide islands, and fabrication of OFETs and gold interconnects on elastic substrates to realize pressure, temperature and optical sensors. Here we present a platform that makes electronics both virtually unbreakable and imperceptible. Fabricated directly on ultrathin (1 μm) polymer foils, our electronic circuits are light (3 g m(-2)) and ultraflexible and conform to their ambient, dynamic environment. Organic transistors with an ultra-dense oxide gate dielectric a few nanometres thick formed at room temperature enable sophisticated large-area electronic foils with unprecedented mechanical and environmental stability: they withstand repeated bending to radii of 5 μm and less, can be crumpled like paper, accommodate stretching up to 230% on prestrained elastomers, and can be operated at high temperatures and in aqueous environments. Because manufacturing costs of organic electronics are potentially low, imperceptible electronic foils may be as common in the future as plastic wrap is today. Applications include matrix-addressed tactile sensor foils for health care and monitoring, thin-film heaters, temperature and infrared sensors, displays, and organic solar cells.
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            High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

            The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.
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              Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.

              Memory is believed to occur in the human brain as a result of two types of synaptic plasticity: short-term plasticity (STP) and long-term potentiation (LTP; refs 1-4). In neuromorphic engineering, emulation of known neural behaviour has proven to be difficult to implement in software because of the highly complex interconnected nature of thought processes. Here we report the discovery of a Ag(2)S inorganic synapse, which emulates the synaptic functions of both STP and LTP characteristics through the use of input pulse repetition time. The structure known as an atomic switch, operating at critical voltages, stores information as STP with a spontaneous decay of conductance level in response to intermittent input stimuli, whereas frequent stimulation results in a transition to LTP. The Ag(2)S inorganic synapse has interesting characteristics with analogies to an individual biological synapse, and achieves dynamic memorization in a single device without the need of external preprogramming. A psychological model related to the process of memorizing and forgetting is also demonstrated using the inorganic synapses. Our Ag(2)S element indicates a breakthrough in mimicking synaptic behaviour essential for the further creation of artificial neural systems that emulate characteristics of human memory.
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                Author and article information

                Contributors
                swnam@illinois.edu
                dkim98@snu.ac.kr
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                23 November 2020
                23 November 2020
                2020
                : 11
                : 5934
                Affiliations
                [1 ]GRID grid.410720.0, ISNI 0000 0004 1784 4496, Center for Nanoparticle Research, Institute for Basic Science (IBS), ; Seoul, 08826 Republic of Korea
                [2 ]GRID grid.31501.36, ISNI 0000 0004 0470 5905, School of Chemical and Biological Engineering, Institute of Chemical Processes, , Seoul National University, ; Seoul, 08826 Republic of Korea
                [3 ]GRID grid.35403.31, ISNI 0000 0004 1936 9991, Department of Mechanical Science and Engineering, , University of Illinois at Urbana-Champaign, ; Urbana, IL 61801 USA
                [4 ]GRID grid.61221.36, ISNI 0000 0001 1033 9831, School of Electrical Engineering and Computer Science, , Gwangju Institute of Science and Technology, ; Gwangju, 61005 Republic of Korea
                [5 ]GRID grid.35403.31, ISNI 0000 0004 1936 9991, Department of Materials Science and Engineering, , University of Illinois at Urbana-Champaign, ; Urbana, IL 61801 USA
                [6 ]GRID grid.31501.36, ISNI 0000 0004 0470 5905, Department of Materials Science and Engineering, , Seoul National University, ; Seoul, 08826 Republic of Korea
                Author information
                http://orcid.org/0000-0002-0428-5117
                http://orcid.org/0000-0002-0690-7784
                http://orcid.org/0000-0003-2468-2061
                http://orcid.org/0000-0002-5743-7110
                http://orcid.org/0000-0002-9624-8072
                http://orcid.org/0000-0003-2225-2738
                http://orcid.org/0000-0001-5999-9646
                http://orcid.org/0000-0002-1225-5559
                http://orcid.org/0000-0002-4473-6883
                http://orcid.org/0000-0001-5959-6257
                http://orcid.org/0000-0002-9622-7837
                http://orcid.org/0000-0002-9719-7203
                http://orcid.org/0000-0002-4722-1893
                Article
                19806
                10.1038/s41467-020-19806-6
                7683533
                33230113
                e6acb1b4-8332-41c0-86b7-ec9a75263fba
                © The Author(s) 2020

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 15 June 2020
                : 27 October 2020
                Funding
                Funded by: NASA Space Technology Research Fellow (80NSSC17K0149)
                Funded by: FundRef https://doi.org/10.13039/100000001, National Science Foundation (NSF);
                Award ID: DMR-1708852
                Award ID: MRSEC DMR-1720633
                Award ID: CMMI-1921578
                Award ID: ECCS-1935775
                Award ID: CMMI-1904216
                Award ID: DMR-1708852
                Award Recipient :
                Funded by: FundRef https://doi.org/10.13039/100000181, United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research (AF Office of Scientific Research);
                Award ID: FA2386-17-1-4071
                Award Recipient :
                Funded by: NASA early carrier faculty (NNX16AR56G) Young Investigator Program - Office of Naval Research (N00014-17-1-2830)
                Funded by: FundRef https://doi.org/10.13039/501100010446, Institute for Basic Science (IBS);
                Award ID: IBS-R006-A1
                Award Recipient :
                Funded by: Institute for Basic Science (IBS-R006-A1)
                Categories
                Article
                Custom metadata
                © The Author(s) 2020

                Uncategorized
                electronic devices,sensors and biosensors,two-dimensional materials
                Uncategorized
                electronic devices, sensors and biosensors, two-dimensional materials

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