An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-/spl kappa/ gate dielectric

Chunshan Yin, null; Chan, P.C.H.; Chan, M.

doi:10.1109/LED.2005.846584

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An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-/spl kappa/ gate dielectric

Author(s): Chunshan Yin , P.C.H. Chan , M. Chan

Publication date (Print): May 2005

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, J. M. Anthony, R. M. Wallace (2001)

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The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

V.R. Rao, N.R. Mohapatra, M.P. Desai … (2002)

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Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions

A. Vandooren, A. Barr, L. Mathew … (2003)

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

Publication date Created: May 2005

Publication date (Print): May 2005

Volume: 26

Issue: 5

Pages: 323-325

Article

DOI: 10.1109/LED.2005.846584

SO-VID: f66c1ba2-a1f4-4a3b-8bfb-c2daaf4ffb56

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An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-/spl kappa/ gate dielectric

Read this article at

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Electron Channelling Contrast Imaging (ECCI)

Most cited references 5

High-κ gate dielectrics: Current status and materials properties considerations

The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions

Author and article information

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Article

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