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      Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor

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          Low dielectric constant materials for microelectronics

          K Maex, M R Baklanov, S. Brongersma … (2003)
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            The resonant gate transistor

            H.C. Nathanson, W.E. Newell, R.A. Wickstrom … (1967)
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              Scaling the Si MOSFET: from bulk to SOI to bulk

              R.-H. Yan, A. Ourmazd, K.F. Lee (1992)
              Article 0 comments Cited 125 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): APPLAB
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: June 23 2014
                Publication date (Print): June 23 2014
                Publication date (Electronic): June 25 2014
                Volume: 104
                Issue: 25
                Page: 253506
                Affiliations
                [1 ] Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, USA
                [2 ] Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
                [3 ] National Nanofab Center, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea
                Article
                DOI: 10.1063/1.4885595
                SO-VID: f6cae74c-1a49-4b8e-9d29-1348f62f6e07
                Copyright © © 2014
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