The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

Rao, V.R.; Mohapatra, N.R.; Desai, M.P.; Narendra, S.G.

doi:10.1109/16.998591

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The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

Author(s): N.R. Mohapatra , M.P. Desai , S.G. Narendra , V.R. Rao

Publication date (Print): May 2002

Journal: IEEE Transactions on Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, W. Wang, D.A. Buchanan … (1997)

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MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

D.C. Gilmer, Ming-Ta Hsieh, W.L. Gladfelter … (1997)

0 comments Cited 80 times – based on 0 reviews      Review now

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The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

A. Inani, R. Rao, M Cao … (1999)

0 comments Cited 39 times – based on 0 reviews      Review now

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Author and article information

Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 00189383

Publication date (Print): May 2002

Volume: 49

Issue: 5

Pages: 826-831

Article

DOI: 10.1109/16.998591

SO-VID: 0d76ddcc-6f5a-4066-8835-c351679bbd29

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The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performance

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Computer Vision, Deep Learning, Deep Reinforcement Learning, IoT

Most cited references 6

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

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Article

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