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      Co diffusion and growth of buried single‐crystal CoSi2in Si(111) by endotaxy

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      Journal of Applied Physics
      AIP Publishing

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          Mesotaxy: Single‐crystal growth of buried CoSi2layers

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            Formation of Uniform Solid-Phase Epitaxial CoSi2Films by Patterning Method

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              Control of epitaxial orientation of Si on CoSi2(111)

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 1992
                September 1992
                : 72
                : 5
                : 1874-1878
                Article
                10.1063/1.351660
                d00fa01f-524d-46b2-bb00-ae0e002b7d43
                © 1992
                History

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