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Co diffusion and growth of buried single‐crystal CoSi2in Si(111) by endotaxy
Author(s):
R. W. Fathauer
,
T. George
,
W. T. Pike
Publication date
Created:
September 1992
Publication date
(Print):
September 1992
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Most cited references
8
Record
: found
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Article
: not found
Mesotaxy: Single‐crystal growth of buried CoSi2layers
Alice E White
,
J M Gibson
,
J. Garno
…
(1987)
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Formation of Uniform Solid-Phase Epitaxial CoSi2Films by Patterning Method
Seijiro Furukawa
,
Kouichirou Ishibashi
(1985)
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Control of epitaxial orientation of Si on CoSi2(111)
J. L. Batstone
,
R. T. Tung
(1988)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
September 1992
Publication date (Print):
September 1992
Volume
: 72
Issue
: 5
Pages
: 1874-1878
Article
DOI:
10.1063/1.351660
SO-VID:
d00fa01f-524d-46b2-bb00-ae0e002b7d43
Copyright ©
© 1992
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