Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

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Journal

Title: Nano Letters

Abbreviated Title: Nano Lett.

Publisher: American Chemical Society (ACS)

ISSN (Print): 1530-6984

ISSN (Electronic): 1530-6992

Publication date Created: September 18 2018

Publication date Created: October 10 2018

Publication date (Electronic): September 07 2018

Publication date (Print): October 10 2018

Volume: 18

Issue: 10

Pages: 6340-6346

Affiliations

[1 ]NUS Graduate School for Integrative Sciences and Engineering, Centre for Life Sciences No. 05-01, 28 Medical Drive, 117456 Singapore

[2 ]Department of Chemistry, National University of Singapore, Science Drive 3, 117543 Singapore

[3 ]Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore

[4 ]Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 117546 Singapore

[5 ]Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong

[6 ]Department of Physics, National University of Singapore, 3 Science Drive 2, 117542 Singapore

Article

DOI: 10.1021/acs.nanolett.8b02688

PubMed ID: 30192558

SO-VID: bc8b332f-9962-455b-9145-96873e9a127e

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