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      Layered TaSiN as an Oxidation Resistant Electrically Conductive Barrier

      Author(s): , ,
      Publication date (Electronic):
      Journal: Journal of Materials Research
      Publisher: Cambridge University Press (CUP)

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          Base electrodes for high dielectric constant oxide materials in silicon technology

          A Grill, W. Kane, M. Brady … (1992)
          Article 0 comments Cited 22 times – based on 0 reviews     Review now
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            Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations

            M‐A. Nicolet, J. Molarius, C. W. Nieh … (1990)
            Article 0 comments Cited 21 times – based on 0 reviews     Review now
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              Amorphous Ta-Si-N diffusion barriers in Si/Al and Si/Cu metallizations

              J.S. Reid, E. Kolawa, P.J. Pokela … (1991)
              Article 0 comments Cited 7 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): applab
                Title: Journal of Materials Research
                Abbreviated Title: J. Mater. Res.
                Publisher: Cambridge University Press (CUP)
                ISSN (Print): 0884-2914
                ISSN (Electronic): 2044-5326
                Publication date Created: April 1999
                Publication date (Electronic): January 31 2011
                Publication date (Print): April 1999
                Volume: 14
                Issue: 04
                Pages: 1604-1609
                Article
                DOI: 10.1557/JMR.1999.0215
                SO-VID: a187c5ec-f70a-4058-ad8f-80e9139484b0
                Copyright © © 1999
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