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      Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis

      Author(s): , ,
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Fowler‐Nordheim Tunneling into Thermally Grown SiO2

          M. Lenzlinger, E. H. Snow (1969)
          Article 0 comments Cited 352 times – based on 0 reviews     Review now
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            On tunneling in metal‐oxide‐silicon structures

            Z. Weinberg (1982)
            Article 0 comments Cited 130 times – based on 0 reviews     Review now
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              Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

              M. Depas, B. Vermeire, P.W Mertens … (1995)
              Article 0 comments Cited 38 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: February 25 2002
                Publication date (Print): February 25 2002
                Volume: 80
                Issue: 8
                Pages: 1403-1405
                Article
                DOI: 10.1063/1.1453478
                SO-VID: 2cbd90f3-a924-4fcf-afee-499119b0f362
                Copyright © © 2002
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