Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

Poler, J. C.

doi:10.1116/1.587113

Record: found
Abstract: not found
Article: not found

Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

Author(s): J. C. Poler

Publication date (Print): January 1994

Journal: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Publisher: American Vacuum Society

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Author and article information

Journal

Journal ID (publisher-id): JVTBD9

Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Abbreviated Title: J. Vac. Sci. Technol. B

Publisher: American Vacuum Society

ISSN (Print): 0734211X

Publication date (Print): January 1994

Volume: 12

Issue: 1

Page: 88

Article

DOI: 10.1116/1.587113

SO-VID: 8dddd3d0-7ba1-47f9-8acc-a2693d772a42

History

Data availability:

Comments

Comment on this article

scite_

Cited by 5

See all cited by

Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

Read this article at

Related collections

ScienceOpen Research

Author and article information

Journal

Article

History

Comments

Comment on this article

Similar content 1,810

Cited by 5