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Limiting Si/SiO2 interface roughness resulting from thermal oxidation
Author(s):
L. Lai
,
E. A. Irene
Publication date
Created:
August 1999
Publication date
(Print):
August 1999
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Optical properties of thin films
D.E. Aspnes
(1982)
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The Si–SiO2 interface: Correlation of atomic structure and electrical properties
M Henzler
,
P. Hahn
(1984)
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Interface effects and high conductivity in oxides grown from polycrystalline silicon
D. Kerr
,
D. DiMaria
(1975)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
August 1999
Publication date (Print):
August 1999
Volume
: 86
Issue
: 3
Pages
: 1729-1735
Article
DOI:
10.1063/1.370954
SO-VID:
0727d077-dcb0-4ff4-835f-b55146802b66
Copyright ©
© 1999
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