Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers

Cabral, C.; Saenger, K. L.; Kotecki, D. E.; Harper, J. M. E.

doi:10.1557/JMR.2000.0031

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Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers

Author(s): C. Cabral , K. L. Saenger , D. E. Kotecki , J. M. E. Harper

Publication date (Electronic): January 31 2011

Journal: Journal of Materials Research

Publisher: Cambridge University Press (CUP)

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(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM

G. Kunkel, R. B. Laibowitz, K. Saenger … (1999)

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Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations

P. J. Pokela, J. Reid, J. S. Chen … (1991)

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Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations

M‐A. Nicolet, J. Molarius, C. W. Nieh … (1990)

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Journal ID (publisher-id): applab

Title: Journal of Materials Research

Abbreviated Title: J. Mater. Res.

Publisher: Cambridge University Press (CUP)

ISSN (Print): 0884-2914

ISSN (Electronic): 2044-5326

Publication date Created: January 2000

Publication date (Electronic): January 31 2011

Publication date (Print): January 2000

Volume: 15

Issue: 01

Pages: 194-198

Article

DOI: 10.1557/JMR.2000.0031

SO-VID: 28d7340b-b508-4fdf-8ffa-44f1e5b33da4

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Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers

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Most cited references 10

(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM

Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations

Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations

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