10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Pala, Vipindas; Brunt, Edward V.; Cheng, Lin Chih; O'Loughlin, Michael; Richmond, Jim; Burk, Albert; Allen, Scott T.; Grider, David; Palmour, John W.; Scozzie, Charles J.

doi:10.1109/ECCE.2014.6953428

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10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

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Author(s): Vipindas Pala , Edward V. Brunt , Lin Cheng , Michael O'Loughlin , Jim Richmond , Albert Burk , Scott T. Allen , David Grider , John W. Palmour , Charles J. Scozzie

Publication date (Print): September 2014

Conference name: 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

Conference date: October 14, 2014 - October 18, 2014

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Publication date (Print): September 2014

Pages: 449-454

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DOI: 10.1109/ECCE.2014.6953428

SO-VID: 95904424-c29a-487f-b681-5b3843554a53

Conference name: 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

Conference location: Pittsburgh, PA, USA

Conference date: October 14, 2014 - October 18, 2014

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10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

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