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      Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

      Proceedings of the IEEE
      Institute of Electrical and Electronics Engineers (IEEE)

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          Semiconductors for high‐voltage, vertical channel field‐effect transistors

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            Review of Silicon Carbide Power Devices and Their Applications

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              Silicon-carbide high-voltage (400 V) Schottky barrier diodes

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                Author and article information

                Journal
                Proceedings of the IEEE
                Proc. IEEE
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9219
                1558-2256
                November 2017
                November 2017
                : 105
                : 11
                : 2019-2047
                Article
                10.1109/JPROC.2017.2687701
                84d4438e-066e-434b-aaa7-ca5b0cc4f9ea
                © 2017
                History

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