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      Spatially Controlled Single Photon Emitters in hBN‐Capped WS 2 Domes

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          Abstract

          Monolayers (MLs) of transition‐metal dichalcogenides host efficient single‐photon emitters (SPEs) usually associated to the presence of nanoscale mechanical deformations or strain. Large‐scale spatial control of strain would enhance the scalability of such SPEs and allow for their incorporation into photonic structures. Here, the formation of regular arrays of strained hydrogen‐filled one‐layer‐thick micro‐domes obtained by H‐ion irradiation and lithography‐based approaches is reported. Typically, the H 2 liquefaction for temperatures T<32 K causes the disappearance of the domes preventing their use as potential SPEs. Here, it is shown that the dome deflation can be overcome by hBN heterostructuring, that is by depositing thin hBN flakes on the domes. This leads to the preservation of the dome structure at all temperatures, as found by micro‐Raman and micro‐photoluminescence (µ‐PL) studies. Eventually, spatially controlled hBN‐capped WS 2 domes show the appearance, at 5 K, of intense emission lines originating from localized excitons, which are shown to behave as quantum emitters here. The electronic properties of the emitters are addressed by time‐resolved µ‐PL yielding time decays of 1–10 ns, and by magneto‐µ‐PL measurements. The latter provide an exciton magnetic moment a factor of two larger than the value observed in planar strain‐free MLs.

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          Emerging photoluminescence in monolayer MoS2.

          Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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            Atomically Thin\({\mathrm{MoS}}_{2}\): A New Direct-Gap Semiconductor

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              Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping

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                Author and article information

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                Journal
                Advanced Optical Materials
                Advanced Optical Materials
                Wiley
                2195-1071
                2195-1071
                June 2023
                April 08 2023
                June 2023
                : 11
                : 12
                Affiliations
                [1 ] Physics Department Sapienza University of Rome Rome 00185 Italy
                [2 ] Institute for Photonics and Nanotechnologies (CNR‐IFN) National Research Council Rome 00133 Italy
                [3 ] Institute of Experimental Physics Faculty of Physics University of Warsaw Warsaw 02‐093 Poland
                [4 ] Department of Applied Physics and Science Education Eindhoven University of Technology Eindhoven 5600 MB The Netherlands
                [5 ] International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan
                [6 ] Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan
                Article
                10.1002/adom.202202953
                8f7e78f2-13bb-47f0-9ebf-ae2297008a6f
                © 2023

                http://creativecommons.org/licenses/by/4.0/

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