Strain modification in coherent Ge and SixGe1−xepitaxial films by ion‐assisted molecular beam epitaxy

Tsai, C J; Atwater, H. A.; Vreeland, T.

doi:10.1063/1.103877

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Strain modification in coherent Ge and SixGe1−xepitaxial films by ion‐assisted molecular beam epitaxy

Author(s): C. J. Tsai , H. A. Atwater , T. Vreeland

Publication date Created: November 26 1990

Publication date (Print): November 26 1990

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 13

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Diffusion Mechanisms and Point Defects in Silicon and Germanium

A. Seeger, K. Chik (1968)

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Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer

W. J. Bartels (1983)

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Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysis

C. R. Wie, T. A. Tombrello, T. Vreeland (1986)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: November 26 1990

Publication date (Print): November 26 1990

Volume: 57

Issue: 22

Pages: 2305-2307

Article

DOI: 10.1063/1.103877

SO-VID: 80dd5c43-4fd1-4727-96b0-1330a10139f0

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Strain modification in coherent Ge and SixGe1−xepitaxial films by ion‐assisted molecular beam epitaxy

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HR-EBSD (High Resolution - Electron Back Scatter Diffraction)

Most cited references 13

Diffusion Mechanisms and Point Defects in Silicon and Germanium

Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer

Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysis

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