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      Raman scattering and stress measurements in Si1−xGexlayers epitaxially grown on Si(100) by ion‐beam sputter deposition

      Author(s): , , , , ,
      Publication date Created:
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      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Defects in epitaxial multilayers

          J.W. Matthews, A.E. Blakeslee (1974)
          Article 0 comments Cited 665 times – based on 0 reviews     Review now
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            GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

            J. C. Bean, L Feldman, A. Fiory … (1984)
            Article 0 comments Cited 222 times – based on 0 reviews     Review now
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              Effect of static uniaxial stress on the Raman spectrum of silicon

              M. Cardona, F.H. Pollak, E. Burstein … (1970)
              Article 0 comments Cited 155 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: October 15 1991
                Publication date (Print): October 15 1991
                Volume: 70
                Issue: 8
                Pages: 4268-4277
                Article
                DOI: 10.1063/1.349104
                SO-VID: 7e464052-fb55-43ba-bbd1-f68d008c9ce3
                Copyright © © 1991
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