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      Highly Efficient Blue Emission from Self-Trapped Excitons in Stable Sb 3+-Doped Cs 2NaInCl 6 Double Perovskites

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          Surface passivation of perovskite film for efficient solar cells

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            Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent

            Metal halide perovskite materials are an emerging class of solution-processable semiconductors with considerable potential for use in optoelectronic devices1-3. For example, light-emitting diodes (LEDs) based on these materials could see application in flat-panel displays and solid-state lighting, owing to their potential to be made at low cost via facile solution processing, and could provide tunable colours and narrow emission line widths at high photoluminescence quantum yields4-8. However, the highest reported external quantum efficiencies of green- and red-light-emitting perovskite LEDs are around 14 per cent7,9 and 12 per cent8, respectively-still well behind the performance of organic LEDs10-12 and inorganic quantum dot LEDs13. Here we describe visible-light-emitting perovskite LEDs that surpass the quantum efficiency milestone of 20 per cent. This achievement stems from a new strategy for managing the compositional distribution in the device-an approach that simultaneously provides high luminescence and balanced charge injection. Specifically, we mixed a presynthesized CsPbBr3 perovskite with a MABr additive (where MA is CH3NH3), the differing solubilities of which yield sequential crystallization into a CsPbBr3/MABr quasi-core/shell structure. The MABr shell passivates the nonradiative defects that would otherwise be present in CsPbBr3 crystals, boosting the photoluminescence quantum efficiency, while the MABr capping layer enables balanced charge injection. The resulting 20.3 per cent external quantum efficiency represents a substantial step towards the practical application of perovskite LEDs in lighting and display.
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              Efficient and stable emission of warm-white light from lead-free halide double perovskites

              Lighting accounts for one-fifth of global electricity consumption1. Single materials with efficient and stable white-light emission are ideal for lighting applications, but photon emission covering the entire visible spectrum is difficult to achieve using a single material. Metal halide perovskites have outstanding emission properties2,3; however, the best-performing materials of this type contain lead and have unsatisfactory stability. Here we report a lead-free double perovskite that exhibits efficient and stable white-light emission via self-trapped excitons that originate from the Jahn-Teller distortion of the AgCl6 octahedron in the excited state. By alloying sodium cations into Cs2AgInCl6, we break the dark transition (the inversion-symmetry-induced parity-forbidden transition) by manipulating the parity of the wavefunction of the self-trapped exciton and reduce the electronic dimensionality of the semiconductor4. This leads to an increase in photoluminescence efficiency by three orders of magnitude compared to pure Cs2AgInCl6. The optimally alloyed Cs2(Ag0.60Na0.40)InCl6 with 0.04 per cent bismuth doping emits warm-white light with 86 ± 5 per cent quantum efficiency and works for over 1,000 hours. We anticipate that these results will stimulate research on single-emitter-based white-light-emitting phosphors and diodes for next-generation lighting and display technologies.
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                Author and article information

                Contributors
                Journal
                The Journal of Physical Chemistry Letters
                J. Phys. Chem. Lett.
                American Chemical Society (ACS)
                1948-7185
                1948-7185
                March 19 2020
                February 27 2020
                March 19 2020
                : 11
                : 6
                : 2053-2061
                Affiliations
                [1 ]School of Materials Science and Engineering, School of Life and Environmental Sciences, Guilin University of Electronic Technology, Guilin 541004, People’s Republic of China
                [2 ]School of Physical Science and Technology, Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials (Ministry of Education), Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University, Nanning 530004, People’s Republic of China
                [3 ]School of Physics and Electronics, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, People’s Republic of China
                [4 ]Key Laboratory for Matter Microstructure and Function of Hunan Province, Synergetic Innovation Center for Quantum Effects and Application, Hunan Normal University, Changsha 410081, People’s Republic of China
                Article
                10.1021/acs.jpclett.0c00330
                32105076
                74467f5e-9864-4714-91cb-7b14a4de1942
                © 2020
                History

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