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      • Record: found
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      Study of short-circuit robustness of p-GaN and cascode transistors

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Microelectronics Reliability
      Publisher: Elsevier BV

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          Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

          Daniel Costinett, Fei Wang, Edward Jones (2016)
          Article 0 comments Cited 62 times – based on 0 reviews     Review now
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            Current Status and Future Trends of GaN HEMTs in Electrified Transportation

            Niloufar Keshmiri, Deqiang Wang, Bharat L. Agrawal … (2020)
            Article 0 comments Cited 9 times – based on 0 reviews     Review now
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              Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

              Ruizhe Zhang, Jingcun Liu, Qiang Li … (2022)
              Article 0 comments Cited 7 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Microelectronics Reliability
                Abbreviated Title: Microelectronics Reliability
                Publisher: Elsevier BV
                ISSN (Print): 00262714
                Publication date Created: November 2022
                Publication date (Print): November 2022
                Volume: 138
                Page: 114695
                Article
                DOI: 10.1016/j.microrel.2022.114695
                SO-VID: 5efd57d2-a516-4772-ae93-7aabdf3846d8
                Copyright © © 2022
                License:

                https://www.elsevier.com/tdm/userlicense/1.0/

                http://www.elsevier.com/open-access/userlicense/1.0/

                https://doi.org/10.15223/policy-017

                https://doi.org/10.15223/policy-037

                https://doi.org/10.15223/policy-012

                https://doi.org/10.15223/policy-029

                https://doi.org/10.15223/policy-004

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