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      Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon

      Author(s): , ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
      Publisher: American Vacuum Society

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          Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching

          J Coburn, Harold F. Winters (1979)
          Article 0 comments Cited 156 times – based on 0 reviews     Review now
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            Universal energy dependence of physical and ion‐enhanced chemical etch yields at low ion energy

            Christoph Steinbrüchel (1989)
            Article 0 comments Cited 84 times – based on 0 reviews     Review now
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              Charging of pattern features during plasma etching

              J Arnold, H. H. Sawin (1991)
              Article 0 comments Cited 70 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
                Abbreviated Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
                Publisher: American Vacuum Society
                ISSN (Print): 0734-2101
                ISSN (Electronic): 1520-8559
                Publication date Created: January 1998
                Publication date (Print): January 1998
                Volume: 16
                Issue: 1
                Pages: 217-224
                Article
                DOI: 10.1116/1.580974
                SO-VID: 5ddef721-681e-439e-b458-ad62603b89fd
                Copyright © © 1998
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