Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

Publication date Created: November 1984

Publication date (Print): November 1984

Volume: 5

Issue: 11

Pages: 468-470

Article

DOI: 10.1109/EDL.1984.25991

SO-VID: 1584ad83-6d98-4b1d-a21c-2774384df3e7

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