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      Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

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          Conference
          June 2010
          June 2010
          : 57-58
          Article
          10.1109/VLSIT.2010.5556122
          5a6ed1da-c0d2-4d9e-beb7-478e1807ca65
          © 2010
          2010 IEEE Symposium on VLSI Technology
          Honolulu, HI, USA
          July 15, 2010 - July 17, 2010
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