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      Mammalian-brain-inspired neuromorphic motion-cognition nerve achieves cross-modal perceptual enhancement

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          Abstract

          Perceptual enhancement of neural and behavioral response due to combinations of multisensory stimuli are found in many animal species across different sensory modalities. By mimicking the multisensory integration of ocular-vestibular cues for enhanced spatial perception in macaques, a bioinspired motion-cognition nerve based on a flexible multisensory neuromorphic device is demonstrated. A fast, scalable and solution-processed fabrication strategy is developed to prepare a nanoparticle-doped two-dimensional (2D)-nanoflake thin film, exhibiting superior electrostatic gating capability and charge-carrier mobility. The multi-input neuromorphic device fabricated using this thin film shows history-dependent plasticity, stable linear modulation, and spatiotemporal integration capability. These characteristics ensure parallel, efficient processing of bimodal motion signals encoded as spikes and assigned with different perceptual weights. Motion-cognition function is realized by classifying the motion types using mean firing rates of encoded spikes and postsynaptic current of the device. Demonstrations of recognition of human activity types and drone flight modes reveal that the motion-cognition performance match the bio-plausible principles of perceptual enhancement by multisensory integration. Our system can be potentially applied in sensory robotics and smart wearables.

          Abstract

          Inspired by the multisensory cue integration in macaque’s brain for spatial perception, the authors develop a neuromorphic motion-cognition nerve that achieves cross-modal perceptual enhancement for robotics and wearable applications.

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          Most cited references47

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          Electrolyte-gated transistors for organic and printed electronics.

          Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.
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            Wearable Sensors for Human Activity Monitoring: A Review

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              Solution-processable 2D semiconductors for high-performance large-area electronics

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                Author and article information

                Contributors
                wentao@nankai.edu.cn
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                11 March 2023
                11 March 2023
                2023
                : 14
                : 1344
                Affiliations
                [1 ]GRID grid.216938.7, ISNI 0000 0000 9878 7032, Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, School of Materials Science and Engineering, Smart Sensing Interdisciplinary Science Center, , Nankai University, ; Tianjin, 300350 China
                [2 ]Shenzhen Research Institute of Nankai University, Shenzhen, 518000 China
                [3 ]GRID grid.510538.a, ISNI 0000 0004 8156 0818, Research Center for Intelligent Sensing, , Zhejiang Lab, ; Hangzhou, 311100 China
                Author information
                http://orcid.org/0000-0002-6370-4799
                http://orcid.org/0000-0002-1054-6037
                Article
                36935
                10.1038/s41467-023-36935-w
                10008641
                36906637
                53a70145-3522-40bd-a18d-5159751ffe35
                © The Author(s) 2023

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 3 October 2022
                : 21 February 2023
                Funding
                Funded by: FundRef https://doi.org/10.13039/501100001809, National Natural Science Foundation of China (National Science Foundation of China);
                Award ID: 62201290
                Award Recipient :
                Funded by: FundRef https://doi.org/10.13039/501100004731, Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation);
                Award ID: LQ20F010005
                Award Recipient :
                Funded by: National Science Fund for Distinguished Young Scholars of China (T2125005), National Key R&D Program of China (2022YFE0198200), Tianjin Science Foundation for Distinguished Young Scholars (19JCJQJC61000), and the Shenzhen Science and Technology Project (JCYJ20210324121002008)
                Categories
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                © The Author(s) 2023

                Uncategorized
                electronic devices,electronic properties and materials
                Uncategorized
                electronic devices, electronic properties and materials

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