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      New MBE buffer used to eliminate backgating in GaAs MESFETs

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          New MBE buffer used to eliminate backgating in GaAs MESFETs

          F.W. Smith, C-L Chen, M.J. Manfra … (1988)
          Article 0 comments Cited 181 times – based on 0 reviews     Review now
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            Growth temperature dependence in molecular beam epitaxy of gallium arsenide

            T. Murotani, T. Shimanoe, S. Mitsui (1978)
            Article 0 comments Cited 36 times – based on 0 reviews     Review now
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              Backgating in GaAs MESFET's

              C.A. Stolte, C. Kocot (1982)
              Article 0 comments Cited 35 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: IEEE Electron Device Letters
                Abbreviated Title: IEEE Electron Device Lett.
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0741-3106
                ISSN (Electronic): 1558-0563
                Publication date Created: February 1988
                Publication date (Print): February 1988
                Volume: 9
                Issue: 2
                Pages: 77-80
                Article
                DOI: 10.1109/55.2046
                SO-VID: 2f13ea70-bdb5-401f-adda-8c42c5e0be46
                Copyright © © 1988
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