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      Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

      Author(s): , , , , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Schottky Barrier Heights and the Continuum of Gap States

          J Tersoff (1984)
          Article 0 comments Cited 350 times – based on 0 reviews     Review now
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            New and unified model for Schottky barrier and III–V insulator interface states formation

            C Su, P. W. Chye, W. E. Spicer … (1979)
            Article 0 comments Cited 244 times – based on 0 reviews     Review now
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              New MBE buffer used to eliminate backgating in GaAs MESFETs

              F.W. Smith, C-L Chen, M.J. Manfra … (1988)
              Article 0 comments Cited 181 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: September 24 1990
                Publication date (Print): September 24 1990
                Volume: 57
                Issue: 13
                Pages: 1331-1333
                Article
                DOI: 10.1063/1.103474
                SO-VID: 011b6689-1872-473e-911f-54dd558e00f4
                Copyright © © 1990
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