16
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Novel, low-cost solid-liquid-solid process for the synthesis of α-Si 3N 4 nanowires at lower temperatures and their luminescence properties

      research-article

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Ultra-long, single crystal, α-Si 3N 4 nanowires sheathed with amorphous silicon oxide were synthesised by an improved, simplified solid-liquid-solid (SLS) method at 1150 °C without using flowing gases (N 2, CH 4, Ar, NH 3, etc.). Phases, chemical composition, and structural characterisation using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM/HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS) showed that the nanowires had Si 3N 4@SiO x core-shell structures. The growth of the nanowires was governed by the solid-liquid-solid (SLS) mechanism. The room temperature photoluminescence (PL) and cathodoluminescence (CL) spectra showed that the optical properties of the α-Si 3N 4 nanowires can be changed along with the excitation wavelength or the excitation light source. This work can be useful, not only for simplifying the design and synthesis of Si-related nanostructures, but also for developing new generation nanodevices with changeable photoelectronic properties.

          Related collections

          Most cited references7

          • Record: found
          • Abstract: found
          • Article: not found

          The influence of the surface migration of gold on the growth of silicon nanowires.

          Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour-liquid-solid (VLS) mechanism, in which the nanowire grows from a gold/silicon catalyst droplet during silicon chemical vapour deposition. Despite over 40 years of study, many aspects of VLS growth are not well understood. For example, in the conventional picture the catalyst droplet does not change during growth, and the nanowire sidewalls consist of clean silicon facets. Here we demonstrate that these assumptions are false for silicon nanowires grown on Si(111) under conditions where all of the experimental parameters (surface structure, gas cleanliness, and background contaminants) are carefully controlled. We show that gold diffusion during growth determines the length, shape, and sidewall properties of the nanowires. Gold from the catalyst droplets wets the nanowire sidewalls, eventually consuming the droplets and terminating VLS growth. Gold diffusion from the smaller droplets to the larger ones (Ostwald ripening) leads to nanowire diameters that change during growth. These results show that the silicon nanowire growth is fundamentally limited by gold diffusion: smooth, arbitrarily long nanowires cannot be grown without eliminating gold migration.
            Bookmark
            • Record: found
            • Abstract: found
            • Article: not found

            Controlled growth of Si nanowire arrays for device integration.

            Silicon nanowires were synthesized, in a controlled manner, for their practical integration into devices. Gold colloids were used for nanowire synthesis by the vapor-liquid-solid growth mechanism. Using SiCl4 as the precursor gas in a chemical vapor deposition system, nanowire arrays were grown vertically aligned with respect to the substrate. By manipulating the colloid deposition on the substrate, highly controlled growth of aligned silicon nanowires was achieved. Nanowire arrays were synthesized with narrow size distributions dictated by the seeding colloids and with average diameters down to 39 nm. The density of wire growth was successfully varied from approximately 0.1-1.8 wires/microm2. Patterned deposition of the colloids led to confinement of the vertical nanowire growth to selected regions. In addition, Si nanowires were grown directly into microchannels to demonstrate the flexibility of the deposition technique. By controlling various aspects of nanowire growth, these methods will enable their efficient and economical incorporation into devices.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: not found

              One-dimensional nanostructures of metals: large-scale synthesis and some potential applications.

              We review recent developments in our group regarding the solution-phase synthesis of one-dimensional nanostructures of metals. The synthetic approaches include solution-liquid-solid growth for nanowires of low-melting-point metals such as Pb; seed-directed growth for Ag nanowires, nanobeams, and nanobelts; kinetically controlled growth for Pt nanorods, nanowires, and multipods; and galvanic replacement for nanotubes of Au, Pt, and Pd. Both characterization and mechanistic studies are presented for each nanostructure. Finally, we highlight the electrical and plasmonic properties of these metal nanostructures and discuss their potential applications in nanoscale devices.
                Bookmark

                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                26 November 2015
                2015
                : 5
                : 17250
                Affiliations
                [1 ]School of Materials Science and Technology, Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, China University of Geosciences (Beijing) , 100083, P. R. China
                [2 ]College of Engineering, Mathematics and Physical Sciences, University of Exeter , Exeter EX4 4QF, UK
                [3 ]Department of Mechanical Engineering, University College London, Torrington Place , London WC1E 7JE, UK
                [4 ]School of Mechanical and Chemical Engineering, The University of Western Australia , Australia
                Author notes
                Article
                srep17250
                10.1038/srep17250
                4660443
                26607395
                1893893c-92f6-4c33-b26d-4e415843a5f1
                Copyright © 2015, Macmillan Publishers Limited

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 26 June 2015
                : 14 October 2015
                Categories
                Article

                Uncategorized
                Uncategorized

                Comments

                Comment on this article