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      High-Performance Planar-Type Photodetector on (100) Facet of MAPbI 3 Single Crystal

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          Abstract

          Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI 3 optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI 3 single crystal is proposed. We demonstrate that MAPbI 3 photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI 3 single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI 3 photodetector. Compared with similar planar-type photodetectors based on MAPbI 3 polycrystalline film, our MAPbI 3 single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 10 2 times higher responsivity and EQE, and approximately 10 3 times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal.

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          CH3NH3PbI3 perovskite/fullerene planar-heterojunction hybrid solar cells.

          All-solid-state donor/acceptor planar-heterojunction (PHJ) hybrid solar cells are constructed and their excellent performance measured. The deposition of a thin C60 fullerene or fullerene-derivative (acceptor) layer in vacuum on a CH3 NH3 PbI3 perovskite (donor) layer creates a hybrid PHJ that displays the photovoltaic effect. Such heterojunctions are shown to be suitable for the development of newly structured, hybrid, efficient solar cells. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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            Ultrafast graphene photodetector

            The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct interband transitions a considerable fraction of the light (~2.3%) over a very a broad wavelength range. However, while applications in electronics are vigorously being pursued, photonic applications have not attracted as much attention. Here, we report on ultrafast photocurrent response measurements in graphene (single and few-layers) field-effect-transistors (FETs) up to 40 GHz light intensity modulation frequencies, using a 1.55 micron excitation laser. No photoresponse degradation is observable up to the highest measured frequency, demonstrating the feasibility and unique benefits of using graphene in photonics. Further analysis suggests that the intrinsic bandwidth of such graphene FET based photodetectors may exceed 500 GHz. Most notably, the generation and transport of the photo-carriers in such graphene photodetectors are fundamentally different from those in currently known semiconductor photodetectors, leading to a remarkably high bandwidth, zero source-drain bias (hence zero dark current) operation, and good internal quantum efficiency.
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              Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.

              The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W(-1) and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                13 November 2015
                2015
                : 5
                : 16563
                Affiliations
                [1 ]Department of Chemistry, Tsinghua University , Beijing 100084, China
                [2 ]Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences , 40-1 South Beijing Road, Urumqi 830011, China
                [3 ]Collaborative Innovation Center of Quantum Matter, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University , Beijing 100084, China
                Author notes
                Article
                srep16563
                10.1038/srep16563
                4643309
                26563975
                0ec58496-fae2-4d2c-b487-bb2f0ac5c8de
                Copyright © 2015, Macmillan Publishers Limited

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 18 May 2015
                : 15 October 2015
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