Magnetic-field-induced localization in narrow-gap semiconductors$ {\mathrm{Hg}}_{1\mathrm{-}\mathrm{x}}$$ {\mathrm{Cd}}_{\mathrm{x}}$Te and InSb

Drew, H. D.; Goldman, V J; Shayegan, M

doi:10.1103/PhysRevB.38.5585

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Magnetic-field-induced localization in narrow-gap semiconductors ${\mathrm{Hg}}_{1\mathrm{-}\mathrm{x}}$ $ {\mathrm{Cd}}_{\mathrm{x}}$Te and InSb

Author(s): M. Shayegan , V. J. Goldman , H. D. Drew

Publication date (Electronic): September 15 1988

Journal: Physical Review B

Publisher: American Physical Society (APS)

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Hydrogen atom in a strong magnetic field

Y Yafet, E.N. Adams, R.W. Keyes (1956)

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Quantized Hall resistance and the measurement of the fine-structure constant

R. Prange (1981)

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Optical absorption spectrum of hydrogenic atoms in a strong magnetic field

R.E. Howard, H Hasegawa (1961)

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Journal

Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 0163-1829

Publication date Created: September 1988

Publication date (Electronic): September 15 1988

Volume: 38

Issue: 8

Pages: 5585-5602

Article

DOI: 10.1103/PhysRevB.38.5585

SO-VID: 05507456-d340-475e-9ef4-6659b73b99b5

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http://link.aps.org/licenses/aps-default-license

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