Monolithic Integration of an Active InSb-Based Mid-Infrared Photopixel With a GaAs MESFET

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Journal

Title: IEEE Transactions on Electron Devices

Abbreviated Title: IEEE Trans. Electron Devices

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0018-9383

ISSN (Electronic): 1557-9646

Publication date Created: December 2015

Publication date (Print): December 2015

Volume: 62

Issue: 12

Pages: 4069-4075

Article

DOI: 10.1109/TED.2015.2492823

SO-VID: 5a9b4c31-32c2-4c87-866f-8ff1ec9d383d

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