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      Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator

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          Abstract

          Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM‐based synaptic cores suffer from the trade‐off between bit density and performance. The undesired performance degradation with scaling, limited bit precision, and asymmetry associated with weight update poses a severe bottleneck in realizing a high‐density synaptic core. Herein, 1) evaluation of novel differential mode ferroelectric field‐effect transistor (DM‐FeFET) bitcell on a crossbar array of 4 K devices; 2) validation of weighted sum operation on 28 nm DM‐FeFET crossbar array; 3) bit density of 223Mb mm −2, which is ≈2× improvement compared to conventional FeFET array; 4) 196 TOPS/W energy efficiency for VGG‐8 network; and 5) superior bit error rate (BER) resilience showing ≈94% training and 88% inference accuracy with 1% BER are demonstrated.

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          Most cited references17

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          Deep learning.

          Deep learning allows computational models that are composed of multiple processing layers to learn representations of data with multiple levels of abstraction. These methods have dramatically improved the state-of-the-art in speech recognition, visual object recognition, object detection and many other domains such as drug discovery and genomics. Deep learning discovers intricate structure in large data sets by using the backpropagation algorithm to indicate how a machine should change its internal parameters that are used to compute the representation in each layer from the representation in the previous layer. Deep convolutional nets have brought about breakthroughs in processing images, video, speech and audio, whereas recurrent nets have shone light on sequential data such as text and speech.
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            In-memory computing with resistive switching devices

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              A crossbar array of magnetoresistive memory devices for in-memory computing

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                Author and article information

                Contributors
                Journal
                Advanced Intelligent Systems
                Advanced Intelligent Systems
                Wiley
                2640-4567
                2640-4567
                June 2023
                February 22 2023
                June 2023
                : 5
                : 6
                Affiliations
                [1 ] Department of Electrical Engineering Indian Institute of Technology Delhi New Delhi 110016 India
                [2 ] Fraunhofer-Institut für Photonische Mikrosysteme IPMS Center Nanoelectronic Technologies CNT An d. Bartlake 5 Dresden 01109 Germany
                [3 ] Institute of Pioneer Semiconductor Innovation National Yang Ming Chiao Tung University No. 1001, Daxue Rd. East Dist. Hsinchu City 300093 Taiwan
                [4 ] Robert Bosch GmbH Robert-Bosch-Campus 1 Renningen 71272 Germany
                [5 ] Module One GlobalFoundries Wilschdorfer Landstraße 101 Dresden 01109 Germany
                [6 ] International College of Semiconductor Technology National Yang Ming Chiao Tung University No. 1001, Daxue Rd. East Dist. Hsinchu City 300093 Taiwan
                Article
                10.1002/aisy.202200389
                f9d65be6-e8fc-4417-b2e3-dbc6bf008aab
                © 2023

                http://creativecommons.org/licenses/by/4.0/

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