X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias

Yao, Yongzhao; Wakimoto, Daiki; Miyamoto, Hironobu; Sasaki, Kohei; Kuramata, Akito; Hirano, Keiichi; Sugawara, Yoshihiro; Ishikawa, Yukari

doi:10.1016/j.scriptamat.2022.115216

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X-ray topographic observation of dislocations in β-Ga2O3 Schottky barrier diodes and their glide and multiplication under reverse bias

Author(s): Yongzhao Yao , Daiki Wakimoto , Hironobu Miyamoto , Kohei Sasaki , Akito Kuramata , Keiichi Hirano , Yoshihiro Sugawara , Yukari Ishikawa

Publication date Created: March 2023

Publication date (Print): March 2023

Journal: Scripta Materialia

Publisher: Elsevier BV

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A review of Ga2O3 materials, processing, and devices

S Pearton, Jiancheng Yang, Michael Mastro … (2018)

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Recent progress in Ga2O3power devices

Hisashi Murakami, Masataka Higashiwaki, Takekazu Masui … (2016)

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High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

Takekazu Masui, Yu Yamaoka, SHINYA WATANABE … (2016)

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Yongzhao Yao: (View ORCID Profile)

Yoshihiro Sugawara: (View ORCID Profile)

Journal

Title: Scripta Materialia

Abbreviated Title: Scripta Materialia

Publisher: Elsevier BV

ISSN (Print): 13596462

Publication date Created: March 2023

Publication date (Print): March 2023

Volume: 226

Page: 115216

Article

DOI: 10.1016/j.scriptamat.2022.115216

SO-VID: f7fbf563-3c4d-49e5-a9fb-b4a3bfcd3420

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https://www.elsevier.com/tdm/userlicense/1.0/

https://www.elsevier.com/legal/tdmrep-license

http://creativecommons.org/licenses/by/4.0/

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