InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

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Journal ID (publisher-id): JJAP

Title: Japanese Journal of Applied Physics

Abbreviated Title: Jpn. J. Appl. Phys.

Publisher: Japan Society of Applied Physics

ISSN (Print): 00214922

Publication date (Print): January 1996

Volume: 35

Issue: Part 2, No. 1B

Pages: L74-L76

Article

DOI: 10.1143/JJAP.35.L74

SO-VID: f7e601a2-9784-4967-852e-c905e4471587

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