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      Determination of Low Loss in Isotopically Pure Single Crystal 28Si at Low Temperatures and Single Microwave Photon Energy

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          Abstract

          The low dielectric losses of an isotopically pure single crystal 28Si sample were determined at a temperature of 20 mK and at powers equivalent to that of a single photon. Whispering Gallery Mode (WGM) analysis revealed large Quality Factors of order 2 × 10 6 (dielectric loss ~5 × 10 −7) at high powers, degrading to 7 × 10 −5 (dielectric loss ~1.4 × 10 −6 at single photon energy. A very low-loss narrow line width paramagnetic spin flip transition was detected with extreme sensitivity in 28Si, with very small concentration below 10 10 cm −3 (less than 10 parts per trillion) and g-factor of 1.995 ± 0.008. Such determination was only possible due to the low dielectric photonic losses combined with the long lifetime of the spin transition (low magnetic loss), which enhances the magnetic AC susceptibility. Such low photonic loss at single photon energy combined with the narrow line width of the spin ensemble, indicate that single crystal 28Si could be an important crystal for future cavity QED experiments.

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          A single-atom electron spin qubit in silicon

          A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 \mu s. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer.
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            Embracing the quantum limit in silicon computing.

            Quantum computers hold the promise of massive performance enhancements across a range of applications, from cryptography and databases to revolutionary scientific simulation tools. Such computers would make use of the same quantum mechanical phenomena that pose limitations on the continued shrinking of conventional information processing devices. Many of the key requirements for quantum computing differ markedly from those of conventional computers. However, silicon, which plays a central part in conventional information processing, has many properties that make it a superb platform around which to build a quantum computer. © 2011 Macmillan Publishers Limited. All rights reserved
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              Measurements of Permittivity, Dielectric Loss Tangent, and Resistivity of Float-Zone Silicon at Microwave Frequencies

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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                20 March 2017
                2017
                : 7
                : 44813
                Affiliations
                [1 ]ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, University of Western Australia, 35 Stirling Highway , Crawley WA 6009, Australia
                [2 ]G.G. Devyatykh Institute of Chemistry of High-Purity Substances of the Russian Academy of Sciences , 49 Tropinin Str., Nizhny Novgorod 603950, Russia
                [3 ]N.I. Lobachevski State University , 23 Gagarin prosp., Nizhny Novgorod 603950, Russia
                Author notes
                Article
                srep44813
                10.1038/srep44813
                5357852
                28317908
                eb014afc-2f3e-4e30-b235-2f392bb297ce
                Copyright © 2017, The Author(s)

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 01 November 2016
                : 15 February 2017
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