Heterogeneity of grain boundary properties in Cu2ZnSnS4: A first-principles study

Abstract

Using first-principles density functional calculations, we investigate the structure and properties of previously unstudied grain boundaries (GBs) in the solar absorber material copper-zinc-tin-sulfide (CZTS). We identify four stable low-Σ value symmetric tilt GBs with low formation energies: Σ3 (111) and Σ5 (201), each with two different GB terminations. Compared to CdTe and CuInSe, GBs in the quaternary semiconductor CZTS exhibit a wider variety of electronic states due to the more complex chemical environment near the GB, including under-coordinated atoms and dangling bonds. Further analysis confirms that strong dangling bonds introduce deep gap states in all GBs studied. We also investigate segregation and electronic properties of intrinsic point defects to GBs and find that one of the Σ3 (111) GBs exhibits an abnormal defect segregation behavior that favors Cu-poor (Zn-rich) GB composition, which is beneficial for its overall performance.