Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell

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Abstract

Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been used in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrated a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure at the black body and cell temperature of 1775 and 300 K, respectively. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with J _SC = 16.16 A cm ⁻², V _OC = 0.360 V and FF = 75.51%, respectively. These results indicate that GeTe could be a promising material for the fabrication of efficient TPV cell.

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Restoring the density-gradient expansion for exchange in solids and surfaces.

John P Perdew, Adrienn Ruzsinszky, Gábor I Csonka … (2008)

Popular modern generalized gradient approximations are biased toward the description of free-atom energies. Restoration of the first-principles gradient expansion for exchange over a wide range of density gradients eliminates this bias. We introduce a revised Perdew-Burke-Ernzerhof generalized gradient approximation that improves equilibrium properties of densely packed solids and their surfaces.