The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

Ayers, J.E.

doi:10.1016/0022-0248(94)90727-7

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The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

Author(s): J.E. Ayers

Publication date Created: January 1994

Publication date (Print): January 1994

Journal: Journal of Crystal Growth

Publisher: Elsevier BV

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Most cited references 14

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The estimation of dislocation densities in metals from X-ray data

P.B Hirsch, P. Gay, A. Kelly (1953)

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Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer

W. J. Bartels (1983)

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Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe

E.F Kogh, C.G Dunn (1957)

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Author and article information

Journal

Title: Journal of Crystal Growth

Abbreviated Title: Journal of Crystal Growth

Publisher: Elsevier BV

ISSN (Print): 00220248

Publication date Created: January 1994

Publication date (Print): January 1994

Volume: 135

Issue: 1-2

Pages: 71-77

Article

DOI: 10.1016/0022-0248(94)90727-7

SO-VID: de67aa47-cac6-4d3b-ab11-7d97773d25c0

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http://www.elsevier.com/tdm/userlicense/1.0/

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