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      Charge-transfer-based Gas Sensing Using Atomic-layer MoS 2

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          Abstract

          Two-dimensional (2D) molybdenum disulphide (MoS 2) atomic layers have a strong potential to be used as 2D electronic sensor components. However, intrinsic synthesis challenges have made this task difficult. In addition, the detection mechanisms for gas molecules are not fully understood. Here, we report a high-performance gas sensor constructed using atomic-layered MoS 2 synthesised by chemical vapour deposition (CVD). A highly sensitive and selective gas sensor based on the CVD-synthesised MoS 2 was developed. In situ photoluminescence characterisation revealed the charge transfer mechanism between the gas molecules and MoS 2, which was validated by theoretical calculations. First-principles density functional theory calculations indicated that NO 2 and NH 3 molecules have negative adsorption energies (i.e., the adsorption processes are exothermic). Thus, NO 2 and NH 3 molecules are likely to adsorb onto the surface of the MoS 2. The in situ PL characterisation of the changes in the peaks corresponding to charged trions and neutral excitons via gas adsorption processes was used to elucidate the mechanisms of charge transfer between the MoS 2 and the gas molecules.

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          Emerging photoluminescence in monolayer MoS2.

          Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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            Detection of Individual Gas Molecules Absorbed on Graphene

            The ultimate aspiration of any detection method is to achieve such a level of sensitivity that individual quanta of a measured value can be resolved. In the case of chemical sensors, the quantum is one atom or molecule. Such resolution has so far been beyond the reach of any detection technique, including solid-state gas sensors hailed for their exceptional sensitivity. The fundamental reason limiting the resolution of such sensors is fluctuations due to thermal motion of charges and defects which lead to intrinsic noise exceeding the sought-after signal from individual molecules, usually by many orders of magnitude. Here we show that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphenes surface. The adsorbed molecules change the local carrier concentration in graphene one by one electron, which leads to step-like changes in resistance. The achieved sensitivity is due to the fact that graphene is an exceptionally low-noise material electronically, which makes it a promising candidate not only for chemical detectors but also for other applications where local probes sensitive to external charge, magnetic field or mechanical strain are required.
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              Tightly bound trions in monolayer MoS2.

              Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS(2) is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on/off ratio exceeding 10(8) in field-effect transistors, and efficient valley and spin control by optical helicity have recently been demonstrated in this material. Here we report the spectroscopic identification in a monolayer MoS(2) field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole. These quasiparticles, which can be optically created with valley and spin polarized holes, have no analogue in conventional semiconductors. They also possess a large binding energy (~ 20 meV), rendering them significant even at room temperature. Our results open up possibilities both for fundamental studies of many-body interactions and for optoelectronic and valleytronic applications in 2D atomic crystals.
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                27 January 2015
                2015
                : 5
                : 8052
                Affiliations
                [1 ]Advanced Functional Thin Films Department, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea
                [2 ]Advanced Characterization and Analysis Group, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea
                [3 ]School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , 261 Cheomdan-gwagiro, Buk-Gu, Gwangju 500-712, Republic of Korea
                [4 ]Electrochemistry Department, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-Gu, Changwon, Gyeongnam 642-831, Republic of Korea
                [5 ]Department of Chemical Engineering and Materials Science, Stevens Institute of Technology, Hoboken , New Jersey 07030, United States
                [6 ]Cambridge Graphene Center, University of Cambridge , 9 JJ Thomson Avenue, Cambridge, United Kingdom
                [7 ]Department of Materials Science and NanoEngineering, Rice University , 6100 Main Street, Houston, Texas 77005, USA
                Author notes
                [*]

                These authors contributed equally to this work.

                Article
                srep08052
                10.1038/srep08052
                4307013
                25623472
                dc3f584f-064c-4d10-847b-c143988a00af
                Copyright © 2015, Macmillan Publishers Limited. All rights reserved

                This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/

                History
                : 01 October 2014
                : 31 December 2014
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