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      Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric PbZrO3 thin films

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      Journal of Applied Physics
      AIP Publishing

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          Dielectric Properties of Lead Zirconate

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            Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model

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              Switching kinetics of lead zirconate titanate submicron thin‐film memories

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                April 15 2001
                April 15 2001
                : 89
                : 8
                : 4541-4547
                Article
                10.1063/1.1331659
                dc2c458d-9fd4-4033-9564-bb0cbcb9d0bb
                © 2001
                History

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