Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model

Taylor, D. J.; Larsen, P. K.; Dormans, G. J. M.; van Veldhoven, P. J.

doi:10.1063/1.357589

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Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model

Author(s): P. K. Larsen , G. J. M. Dormans , D. J. Taylor , P. J. van Veldhoven

Publication date Created: August 15 1994

Publication date (Print): August 15 1994

Journal: Journal of Applied Physics

Publisher: AIP Publishing

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Nanosecond switching of thin ferroelectric films

P. K. Larsen, G. L. M. Kampschöer, M. J. E. Ulenaers … (1991)

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Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor deposition

Hideo Segawa, Kouji Tominaga, Masaru Okada … (1993)

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Processing and electrical properties of Pb (ZrxTi1−x)O3(x=0.2–0.75) films: Comparison of metallo‐organic decomposition and sol‐gel processes

M Klee, W Brand, R. Eusemann … (1992)

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Journal

Title: Journal of Applied Physics

Abbreviated Title: Journal of Applied Physics

Publisher: AIP Publishing

ISSN (Print): 0021-8979

ISSN (Electronic): 1089-7550

Publication date Created: August 15 1994

Publication date (Print): August 15 1994

Volume: 76

Issue: 4

Pages: 2405-2413

Article

DOI: 10.1063/1.357589

SO-VID: 2838165c-5868-41fb-ada3-396fc2d7a6c6

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Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3thin films of varying thickness: Blocking layer model

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Most cited references 18

Nanosecond switching of thin ferroelectric films

Dependence of electrical properties on film thickness in Pb(ZrxTi1−x)O3 thin films produced by metalorganic chemical vapor deposition

Processing and electrical properties of Pb (ZrxTi1−x)O3(x=0.2–0.75) films: Comparison of metallo‐organic decomposition and sol‐gel processes

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