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      Graphene Field Effect Transistors for Biomedical Applications: Current Status and Future Prospects

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          Abstract

          Since the discovery of the two-dimensional (2D) carbon material, graphene, just over a decade ago, the development of graphene-based field effect transistors (G-FETs) has become a widely researched area, particularly for use in point-of-care biomedical applications. G-FETs are particularly attractive as next generation bioelectronics due to their mass-scalability and low cost of the technology’s manufacture. Furthermore, G-FETs offer the potential to complete label-free, rapid, and highly sensitive analysis coupled with a high sample throughput. These properties, coupled with the potential for integration into portable instrumentation, contribute to G-FETs’ suitability for point-of-care diagnostics. This review focuses on elucidating the recent developments in the field of G-FET sensors that act on a bioaffinity basis, whereby a binding event between a bioreceptor and the target analyte is transduced into an electrical signal at the G-FET surface. Recognizing and quantifying these target analytes accurately and reliably is essential in diagnosing many diseases, therefore it is vital to design the G-FET with care. Taking into account some limitations of the sensor platform, such as Debye–Hükel screening and device surface area, is fundamental in developing improved bioelectronics for applications in the clinical setting. This review highlights some efforts undertaken in facing these limitations in order to bring G-FET development for biomedical applications forward.

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          Most cited references56

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Ultrahigh electron mobility in suspended graphene

            We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, non-suspended devices. This advance should allow for accessing the intrinsic transport properties of graphene.
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              Electrode systems for continuous monitoring in cardiovascular surgery.

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                Author and article information

                Journal
                Diagnostics (Basel)
                Diagnostics (Basel)
                diagnostics
                Diagnostics
                MDPI
                2075-4418
                26 July 2017
                September 2017
                : 7
                : 3
                : 45
                Affiliations
                Centre for Nanohealth, College of Engineering, Swansea University, Swansea SA2 8PP, UK; anitha.devadoss@ 123456swansea.ac.uk
                Author notes
                [* ]Correspondence: 652686@ 123456swansea.ac.uk (R.F.); o.j.guy@ 123456swansea.ac.uk (O.J.G.); Tel.: +44-179-260-6475 (R.F.); +44-179-260-6475 (O.J.G.)
                Author information
                https://orcid.org/0000-0002-8052-1820
                Article
                diagnostics-07-00045
                10.3390/diagnostics7030045
                5617945
                28933752
                db5356c5-85f4-4c4c-b6ef-0777b86a2363
                © 2017 by the authors.

                Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

                History
                : 30 June 2017
                : 20 July 2017
                Categories
                Review

                g-fet (graphene-based field effect transistors),dna,aptamer,debye length,antigen binding fragment,dirac voltage,point-of-care

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