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      High-quality II-VI films grown on amorphous substrates using tunable tetradymite templates

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          Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

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            Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system

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              Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit.

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                Author and article information

                Journal
                APPLAB
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                December 01 2014
                December 01 2014
                December 03 2014
                : 105
                : 22
                : 221606
                Affiliations
                [1 ] Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
                [2 ] Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
                Article
                10.1063/1.4903268
                d973356a-30b6-4125-813e-ae677565a93c
                © 2014

                https://publishing.aip.org/authors/rights-and-permissions

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