Electrodeposition of Nanoparticles and Continuous Film of CdSe on n-Si (100)

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Abstract

CdSe electrodeposition on n-Si (100) substrate was investigated in sulfuric acid solution. The behaviour and the deposition of the precursors (Cd and Se) were studied separately at first. Then, we explored both the alternated deposition, one layer by one, as well as the simultaneous co-deposition of the two elements to form the CdSe semiconductor. Varying the deposition conditions, we were able to obtain nanoparticles, or a thin film, on the surface of the electrode. The samples were then characterised microscopically and spectroscopically with SEM, XRD and XPS. Finally, we evaluated the induced photoemission of the deposit for the application in optoelectronics.

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Most cited references 44

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The work function of the elements and its periodicity

Herbert Michaelson (1977)

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Coaxial silicon nanowires as solar cells and nanoelectronic power sources.

Bozhi Tian, Xiaolin Zheng, Thomas Kempa … (2007)

Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.

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Light trapping in silicon nanowire solar cells.

Erik Christian Garnett, Peidong Yang (2010)

Thin-film structures can reduce the cost of solar power by using inexpensive substrates and a lower quantity and quality of semiconductor material. However, the resulting short optical path length and minority carrier diffusion length necessitates either a high absorption coefficient or excellent light trapping. Semiconducting nanowire arrays have already been shown to have low reflective losses compared to planar semiconductors, but their light-trapping properties have not been measured. Using optical transmission and photocurrent measurements on thin silicon films, we demonstrate that ordered arrays of silicon nanowires increase the path length of incident solar radiation by up to a factor of 73. This extraordinary light-trapping path length enhancement factor is above the randomized scattering (Lambertian) limit (2n(2) approximately 25 without a back reflector) and is superior to other light-trapping methods. By changing the silicon film thickness and nanowire length, we show that there is a competition between improved absorption and increased surface recombination; for nanowire arrays fabricated from 8 mum thick silicon films, the enhanced absorption can dominate over surface recombination, even without any surface passivation. These nanowire devices give efficiencies above 5%, with short-circuit photocurrents higher than planar control samples.

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Journal

Journal ID (nlm-ta): Nanomaterials (Basel)

Journal ID (iso-abbrev): Nanomaterials (Basel)

Journal ID (publisher-id): nanomaterials

Title: Nanomaterials

Publisher: MDPI

ISSN (Electronic): 2079-4991

Publication date (Electronic): 22 October 2019

Publication date Collection: October 2019

Volume: 9

Issue: 10

Electronic Location Identifier: 1504

Affiliations

[1 ]Dipartimento di Chimica, Università degli Studi di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino, Italy; walter.giurlani@ 123456unifi.it (W.G.); vincenzo.dellaquila@ 123456stud.unifi.it (V.D.); martina.vizza@ 123456stud.unifi.it (M.V.); nicola.calisi@ 123456unifi.it (N.C.)

[2 ]CNR-ICCOM, Istituto di Chimica dei Composti OrganoMetallici, via Madonna del Piano 10, 50019 Sesto Fiorentino (FI), Italy; alessandro.lavacchi@ 123456iccom.cnr.it

[3 ]CNR-IPCF, Istituto per i Processi Chimico-Fisici, V.le F. Stagno D’Alcontres 37, 98158 Messina, Italy; irrera@ 123456its.me.cnr.it (A.I.); antonio.leonardi@ 123456ct.infn.it (A.A.L.); dario.morganti@ 123456ct.infn.it (D.M.)

[4 ]Dipartimento di Fisica ed Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy; mariajose.lofaro@ 123456ct.infn.it

Author notes

[* ]Correspondence: m.innocenti@ 123456unifi.it

Author information

Walter Giurlani https://orcid.org/0000-0002-9949-3751

Martina Vizza https://orcid.org/0000-0002-8603-2008

Nicola Calisi https://orcid.org/0000-0001-5060-859X

Alessandro Lavacchi https://orcid.org/0000-0001-8098-2654

Maria Josè Lo Faro https://orcid.org/0000-0002-2067-1608

Antonio Alessio Leonardi https://orcid.org/0000-0001-7723-4356

Massimo Innocenti https://orcid.org/0000-0003-1044-5583

Article

Publisher ID: nanomaterials-09-01504

DOI: 10.3390/nano9101504

PMC ID: 6835584

PubMed ID: 31652606

SO-VID: d96d27da-7443-460d-a02d-17c09109d8e4

License:

Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( http://creativecommons.org/licenses/by/4.0/).

Electrodeposition of Nanoparticles and Continuous Film of CdSe on n-Si (100)

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Abstract

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Silicon thin film solar cells

Most cited references 44

The work function of the elements and its periodicity

Coaxial silicon nanowires as solar cells and nanoelectronic power sources.

Light trapping in silicon nanowire solar cells.

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