Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Yuan, Mengyang; Niroula, John; Xie, Qingyun; Rajput, Nitul S; Fu, Kai; Luo, Shisong; Das, Sagar Kumar; Iqbal, Abdullah Jubair Bin; Sikder, Bejoy; Isamotu, Mohamed Fadil; Oh, Minsik; Eisner, Savannah R.; Senesky, Debbie G.; Hunter, Gary W.; Chowdhury, Nadim; Zhao, Yuji; Palacios, Tomás

doi:10.1109/LED.2023.3279813

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Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Author(s): Mengyang Yuan ¹ , John Niroula ¹ , Qingyun Xie ¹ , Nitul S. Rajput ² , Kai Fu ³ , Shisong Luo ³ , Sagar Kumar Das ⁴ , Abdullah Jubair Bin Iqbal ⁴ , Bejoy Sikder ⁴ , Mohamed Fadil Isamotu ⁵ , Minsik Oh ¹ , Savannah R. Eisner ⁶ , Debbie G. Senesky ⁶ , Gary W. Hunter ⁷ , Nadim Chowdhury ⁴ , Yuji Zhao ³ , Tomás Palacios ¹

Publication date (Print): July 2023

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 33

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High-temperature electronics - a role for wide bandgap semiconductors?

P.G. Neudeck, Liang-Yu Chen, R.S. Okojie (2002)

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Testing the Temperature Limits of GaN-Based HEMT Devices

Mohammed Alomari, Erhard Kohn, Sylvain Delage … (2010)

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InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

N Grandjean, D Maier, M. Alomari … (2012)

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Author and article information

Contributors

Mengyang Yuan: (View ORCID Profile)

Qingyun Xie: (View ORCID Profile)

Nitul S. Rajput: (View ORCID Profile)

Kai Fu: (View ORCID Profile)

Shisong Luo: (View ORCID Profile)

Sagar Kumar Das: (View ORCID Profile)

Abdullah Jubair Bin Iqbal: (View ORCID Profile)

Bejoy Sikder: (View ORCID Profile)

Mohamed Fadil Isamotu: (View ORCID Profile)

Minsik Oh: (View ORCID Profile)

Savannah R. Eisner: (View ORCID Profile)

Debbie G. Senesky: (View ORCID Profile)

Nadim Chowdhury: (View ORCID Profile)

Yuji Zhao: (View ORCID Profile)

Tomás Palacios: (View ORCID Profile)

Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

ISSN (Electronic): 1558-0563

Publication date Created: July 2023

Publication date (Print): July 2023

Volume: 44

Issue: 7

Pages: 1068-1071

Affiliations

[1 ]Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA

[2 ]Advanced Materials Research Center, Technology Innovation Institute, Abu Dhabi, United Arab Emirates

[3 ]Department of Electrical and Computer Engineering, Rice University, Houston, TX, USA

[4 ]Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

[5 ]Department of Computer Science, Johns Hopkins University, Baltimore, MD, USA

[6 ]Department of Aeronautics and Astronautics, Stanford University, Stanford, CA, USA

[7 ]Smart Sensing and Electronics Systems Branch, NASA Glenn Research Center, Cleveland, OH, USA

Article

DOI: 10.1109/LED.2023.3279813

SO-VID: d7eef497-6978-4977-bafc-2ebc1301e012

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https://doi.org/10.15223/policy-029

https://doi.org/10.15223/policy-037

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Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

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Most cited references 33

High-temperature electronics - a role for wide bandgap semiconductors?

Testing the Temperature Limits of GaN-Based HEMT Devices

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

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