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      Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

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          High-temperature electronics - a role for wide bandgap semiconductors?

          P.G. Neudeck, Liang-Yu Chen, R.S. Okojie (2002)
          Article 0 comments Cited 107 times – based on 0 reviews     Review now
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            The Changing Automotive Environment: High-Temperature Electronics

            R.W. Johnson, J.L. Evans, P. Jacobsen … (2004)
            Article 0 comments Cited 89 times – based on 0 reviews     Review now
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              Monte Carlo calculation of velocity-field characteristics of wurtzite GaN

              Udayan V. Bhapkar, Michael S. Shur (1997)
              Article 0 comments Cited 70 times – based on 0 reviews     Review now
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                Author and article information

                Contributors
                Ahmad E. Islam: (View ORCID Profile)
                Hanwool Lee: (View ORCID Profile)
                Nicholas C. Miller: (View ORCID Profile)
                Matt Grupen: (View ORCID Profile)
                Kevin D. Leedy: (View ORCID Profile)
                Antonio Crespo: (View ORCID Profile)
                Wenjuan Zhu: (View ORCID Profile)
                Stephen Tetlak: (View ORCID Profile)
                Kelson D. Chabak: (View ORCID Profile)
                Journal
                Title: IEEE Transactions on Electron Devices
                Abbreviated Title: IEEE Trans. Electron Devices
                Publisher: Institute of Electrical and Electronics Engineers (IEEE)
                ISSN (Print): 0018-9383
                ISSN (Electronic): 1557-9646
                Publication date Created: March 2024
                Publication date (Print): March 2024
                Volume: 71
                Issue: 3
                Pages: 1805-1811
                Affiliations
                [1 ]Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH, USA
                [2 ]KBR, Inc., Beavercreek, OH, USA
                [3 ]Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL, USA
                Article
                DOI: 10.1109/TED.2024.3353694
                SO-VID: f10b4c90-84a6-458f-86af-46b3026ddcf4
                Copyright © © 2024
                License:

                https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/USG.html

                https://doi.org/10.15223/policy-029

                https://doi.org/10.15223/policy-037

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