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      Stresses and deformation processes in thin films on substrates

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      Critical Reviews in Solid State and Materials Sciences
      Informa UK Limited

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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            A method for interpreting the data from depth-sensing indentation instruments

            Depth-sensing indentation instruments provide a means for studying the elastic and plastic properties of thin films. A method for obtaining hardness and Young's modulus from the data obtained from these types of instruments is described. Elastic displacements are determined from the data obtained during unloading of the indentation. Young's modulus can be calculated from these measurements. In addition, the elastic contribution to the total displacement can be removed in order to calculate hardness. Determination of the exact shape of the indenter at the tip is critical to the measurement of both hardness and elastic modulus for indentation depths less than a micron. Hardness is shown to depend on strain rate, especially when the hardness values are calculated from the data along the loading curves.
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              Defects associated with the accommodation of misfit between crystals

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                Author and article information

                Journal
                Critical Reviews in Solid State and Materials Sciences
                Critical Reviews in Solid State and Materials Sciences
                Informa UK Limited
                1040-8436
                1547-6561
                January 1988
                January 1988
                : 14
                : 3
                : 225-268
                Article
                10.1080/10408438808243734
                d757e0e1-0dd8-4507-a9f5-e0d86036fe27
                © 1988
                History

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