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      Co-assembled perylene/graphene oxide photosensitive heterobilayer for efficient neuromorphics

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          Abstract

          Neuromorphic electronics, which use artificial photosensitive synapses, can emulate biological nervous systems with in-memory sensing and computing abilities. Benefiting from multiple intra/interactions and strong light-matter coupling, two-dimensional heterostructures are promising synaptic materials for photonic synapses. Two primary strategies, including chemical vapor deposition and physical stacking, have been developed for layered heterostructures, but large-scale growth control over wet-chemical synthesis with comprehensive efficiency remains elusive. Here we demonstrate an interfacial coassembly heterobilayer films from perylene and graphene oxide (GO) precursors, which are spontaneously formed at the interface, with uniform bilayer structure of single-crystal perylene and well-stacked GO over centimeters in size. The planar heterostructure device exhibits an ultrahigh specific detectivity of 3.1 × 10 13 Jones and ultralow energy consumption of 10 −9 W as well as broadband photoperception from 365 to 1550 nm. Moreover, the device shows outstanding photonic synaptic behaviors with a paired-pulse facilitation (PPF) index of 214% in neuroplasticity, the heterosynapse array has the capability of information reinforcement learning and recognition.

          Abstract

          Layered heterostructures are promising photosensitive materials for advanced optoelectronics. Here, the authors introduce an interfacial coassembly method to construct large-scale perylene/grahene oxide (GO) heterobilayer for broadband photoreception and efficient neuromorphics.

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          Most cited references49

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          Gradient-based learning applied to document recognition

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            The missing memristor found.

            Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
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              Synaptic computation.

              Neurons are often considered to be the computational engines of the brain, with synapses acting solely as conveyers of information. But the diverse types of synaptic plasticity and the range of timescales over which they operate suggest that synapses have a more active role in information processing. Long-term changes in the transmission properties of synapses provide a physiological substrate for learning and memory, whereas short-term changes support a variety of computations. By expressing several forms of synaptic plasticity, a single neuron can convey an array of different signals to the neural circuit in which it operates.
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                Author and article information

                Contributors
                iamjqliu@njtech.edu.cn
                iamyxli@njtech.edu.cn
                vc@nwpu.edu.cn
                Journal
                Nat Commun
                Nat Commun
                Nature Communications
                Nature Publishing Group UK (London )
                2041-1723
                25 August 2022
                25 August 2022
                2022
                : 13
                : 4996
                Affiliations
                [1 ]GRID grid.412022.7, ISNI 0000 0000 9389 5210, Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), , Nanjing Tech University (NanjingTech), ; 30 South Puzhu Road, Nanjing, 211816 China
                [2 ]GRID grid.27255.37, ISNI 0000 0004 1761 1174, Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, , Shandong University, ; Jinan, 250100 China
                [3 ]GRID grid.453246.2, ISNI 0000 0004 0369 3615, State Key Laboratory for Organic Electronics and Information Displays, , Nanjing University of Posts and Telecommunications, ; 9 Wenyuan Road, Nanjing, 210023 China
                [4 ]GRID grid.440588.5, ISNI 0000 0001 0307 1240, Frontiers Science Center for Flexible Electronics, Xi’an Institute of Flexible Electronics (IFE) and Xi’an Institute of Biomedical Materials & Engineering, , Northwestern Polytechnical University, ; 127 West Youyi Road, Xi’an, 710072 China
                Author information
                http://orcid.org/0000-0002-6499-2796
                http://orcid.org/0000-0002-0606-7949
                Article
                32725
                10.1038/s41467-022-32725-y
                9411554
                36008407
                cf159788-d701-4af6-9148-11df856be615
                © The Author(s) 2022

                Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

                History
                : 17 March 2022
                : 11 August 2022
                Funding
                Funded by: National Key R&D Program of China (2017YFB1002900)
                Funded by: National Natural Science Foundation of China (62104104)
                Categories
                Article
                Custom metadata
                © The Author(s) 2022

                Uncategorized
                two-dimensional materials,molecular self-assembly
                Uncategorized
                two-dimensional materials, molecular self-assembly

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