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      Defect energy levels in HfO2 high-dielectric-constant gate oxide

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      Applied Physics Letters
      AIP Publishing

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          Band offsets of wide-band-gap oxides and implications for future electronic devices

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            Generalized Kohn-Sham schemes and the band-gap problem

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              Electronic structure, properties, and phase stability of inorganic crystals: A pseudopotential plane-wave study

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                October 31 2005
                October 31 2005
                : 87
                : 18
                : 183505
                Article
                10.1063/1.2119425
                c8383cbc-391f-428d-b94f-32da3e098581
                © 2005
                History

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