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      Band gap and Schottky barrier heights of multiferroic BiFeO3

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      Applied Physics Letters
      AIP Publishing

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          Epitaxial BiFeO3 multiferroic thin film heterostructures.

          Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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            First-principles calculations of the electronic structure and spectra of strongly correlated systems: theLDA+Umethod

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              Band offsets of wide-band-gap oxides and implications for future electronic devices

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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                March 26 2007
                March 26 2007
                : 90
                : 13
                : 132903
                Article
                10.1063/1.2716868
                45b52e0a-6a6b-4549-8a24-caa3d1539383
                © 2007
                History

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