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      Materials Strategies and Device Architectures of Emerging Power Supply Devices for Implantable Bioelectronics

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          Complex thermoelectric materials.

          Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution. Such a development is contingent on identifying materials with higher thermoelectric efficiency than available at present, which is a challenge owing to the conflicting combination of material traits that are required. Nevertheless, because of modern synthesis and characterization techniques, particularly for nanoscale materials, a new era of complex thermoelectric materials is approaching. We review recent advances in the field, highlighting the strategies used to improve the thermopower and reduce the thermal conductivity.
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            Flexible triboelectric generator

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              Convergence of electronic bands for high performance bulk thermoelectrics.

              Thermoelectric generators, which directly convert heat into electricity, have long been relegated to use in space-based or other niche applications, but are now being actively considered for a variety of practical waste heat recovery systems-such as the conversion of car exhaust heat into electricity. Although these devices can be very reliable and compact, the thermoelectric materials themselves are relatively inefficient: to facilitate widespread application, it will be desirable to identify or develop materials that have an intensive thermoelectric materials figure of merit, zT, above 1.5 (ref. 1). Many different concepts have been used in the search for new materials with high thermoelectric efficiency, such as the use of nanostructuring to reduce phonon thermal conductivity, which has led to the investigation of a variety of complex material systems. In this vein, it is well known that a high valley degeneracy (typically ≤6 for known thermoelectrics) in the electronic bands is conducive to high zT, and this in turn has stimulated attempts to engineer such degeneracy by adopting low-dimensional nanostructures. Here we demonstrate that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition. By this route, we achieve a convergence of at least 12 valleys in doped PbTe(1-x)Se(x) alloys, leading to an extraordinary zT value of 1.8 at about 850 kelvin. Band engineering to converge the valence (or conduction) bands to achieve high valley degeneracy should be a general strategy in the search for and improvement of bulk thermoelectric materials, because it simultaneously leads to a high Seebeck coefficient and high electrical conductivity. ©2011 Macmillan Publishers Limited. All rights reserved
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                Author and article information

                Contributors
                Journal
                Small
                Small
                Wiley
                1613-6810
                1613-6829
                April 2020
                September 12 2019
                April 2020
                : 16
                : 15
                : 1902827
                Affiliations
                [1 ]School of Materials Science and EngineeringThe Key Laboratory of Advanced Materials of Ministry of EducationState Key Laboratory of New Ceramics and Fine ProcessingCenter for Flexible Electronics TechnologyTsinghua University Beijing 100084 P. R. China
                [2 ]Department of Electronic EngineeringBeijing National Research Center for Information Science and Technology and Beijing Innovation Center for Future ChipsTsinghua University Beijing 100084 P. R. China
                [3 ]Department of Materials ScienceTrinity CollegeUniversity of Oxford Oxford OX13BH UK
                Article
                10.1002/smll.201902827
                31513333
                bf09a90a-1830-4bc0-9ec6-b40368f17e33
                © 2020

                http://onlinelibrary.wiley.com/termsAndConditions#vor

                http://doi.wiley.com/10.1002/tdm_license_1.1

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