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      Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

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          Highly efficient and stable InP/ZnSe/ZnS quantum dot light-emitting diodes

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            Energy level modification in lead sulfide quantum dot thin films through ligand exchange.

            The electronic properties of colloidal quantum dots (QDs) are critically dependent on both QD size and surface chemistry. Modification of quantum confinement provides control of the QD bandgap, while ligand-induced surface dipoles present a hitherto underutilized means of control over the absolute energy levels of QDs within electronic devices. Here, we show that the energy levels of lead sulfide QDs, measured by ultraviolet photoelectron spectroscopy, shift by up to 0.9 eV between different chemical ligand treatments. The directions of these energy shifts match the results of atomistic density functional theory simulations and scale with the ligand dipole moment. Trends in the performance of photovoltaic devices employing ligand-modified QD films are consistent with the measured energy level shifts. These results identify surface-chemistry-mediated energy level shifts as a means of predictably controlling the electronic properties of colloidal QD films and as a versatile adjustable parameter in the performance optimization of QD optoelectronic devices.
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              Air-stable n-type colloidal quantum dot solids.

              Colloidal quantum dots (CQDs) offer promise in flexible electronics, light sensing and energy conversion. These applications rely on rectifying junctions that require the creation of high-quality CQD solids that are controllably n-type (electron-rich) or p-type (hole-rich). Unfortunately, n-type semiconductors made using soft matter are notoriously prone to oxidation within minutes of air exposure. Here we report high-performance, air-stable n-type CQD solids. Using density functional theory we identify inorganic passivants that bind strongly to the CQD surface and repel oxidative attack. A materials processing strategy that wards off strong protic attack by polar solvents enabled the synthesis of an air-stable n-type PbS CQD solid. This material was used to build an air-processed inverted quantum junction device, which shows the highest current density from any CQD solar cell and a solar power conversion efficiency as high as 8%. We also feature the n-type CQD solid in the rapid, sensitive, and specific detection of atmospheric NO2. This work paves the way for new families of electronic devices that leverage air-stable quantum-tuned materials.
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                Author and article information

                Contributors
                Journal
                Advanced Functional Materials
                Adv. Funct. Mater.
                Wiley
                1616-301X
                1616-3028
                March 2021
                January 20 2021
                March 2021
                : 31
                : 11
                : 2008453
                Affiliations
                [1 ]Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen 518055 China
                [2 ]Key Laboratory of Energy Conversion and Storage Technologies Southern University of Science and Technology Ministry of Education Shenzhen 518055 China
                [3 ]Shenzhen Planck Innovation Technologies Co. Ltd Shenzhen 518112 China
                Article
                10.1002/adfm.202008453
                bc879d65-f2f6-4592-b5bf-e339cdf60a6b
                © 2021

                http://onlinelibrary.wiley.com/termsAndConditions#vor

                http://doi.wiley.com/10.1002/tdm_license_1.1

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