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      Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition

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          Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy

          Francoise K. LeGoues, Kevin Uram, Bernard Meyerson (1988)
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            Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films

            T. Nguyen, B. S. Meyerson, D. Harame … (1987)
            Article 0 comments Cited 57 times – based on 0 reviews     Review now
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              Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement

              R Reif, T. J. Donahue (1985)
              Article 0 comments Cited 50 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
                Abbreviated Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
                Publisher: American Vacuum Society
                ISSN (Print): 0734-2101
                ISSN (Electronic): 1520-8559
                Publication date Created: September 1998
                Publication date (Print): September 1998
                Volume: 16
                Issue: 5
                Pages: 2785-2790
                Article
                DOI: 10.1116/1.581422
                SO-VID: b7481977-3b16-464b-b48d-4a833ee3a544
                Copyright © © 1998
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